TY - JOUR
T1 - Field stability of piezoelectric shear properties in PIN-PMN-PT crystals under large drive field
AU - Zhang, Shujun
AU - Li, Fei
AU - Luo, Jun
AU - Xia, Ru
AU - Hackenberger, Wesley
AU - Shrout, Thomas R.
N1 - Funding Information:
Manuscript received september 3, 2010; accepted november 16, 2010. The work was supported by nIH under Grant no. P41-Eb21820 and onr. The author F. li (XJTU) acknowledged the national basic research Program of china (973 Program) under Grant no. 2009cb623306, International science & Technology cooperation Program of china under Grant no. 2010dFr50480, and the national nature science foundation of china (Grant no. 10976022 and no. 50632030). s. Zhang, F. li, r. Xia, and T. r. shrout are with the Materials research Institute, The Pennsylvania state University, University Park, Pa (e-mail: [email protected]).
PY - 2011/2
Y1 - 2011/2
N2 - The coercive fields (EC) of Pb(In0.5Nb 0.5)O3- Pb(Mg1/3Nb2/3)O 3-PbTiO3 (PIN-PMN-PT) ternary single crystals were found to be 5 kV/cm, double the value of binary Pb(Mg1/3Nb 2/3)O3-PbTiO3 (PMNT) crystals, further increased to 6 to 9 kV/cm using Mn modifications. In addition to an increased EC, the acceptor modification resulted in the developed internal bias (Eint), on the order of ∼1 kV/cm. The piezoelectric shear properties of unmodified and Mn-modified PIN-PMN-PT crystals with various domain configurations were investigated. The shear piezoelectric coefficients and electromechanical coupling factors for different domain configurations were found to be >2000 pC/N and >0.85, respectively, with slightly reduced properties observed in Mn-modified tetragonal crystals. Fatigue/cycling tests performed on shearmode samples as a function of ac drive field level demonstrated that the allowable ac field levels (the maximum applied ac field before the occurrence of depolarization) were only ∼2 kV/cm for unmodified crystals, less than half of their coercive field. Allowable ac drive levels were on the order of 4 to 6 kV/cm for Mn-modified crystals with rhombohedral/ orthorhombic phase, further increased to 5 to 8 kV/cm in tetragonal crystals, because of their higher coercive fields. It is of particular interest that the allowable ac drive field level for Mn-modified crystals was found to be ≥60% of their coercive fields, because of the developed Eint, induced by the acceptor-oxygen vacancy defect dipoles.
AB - The coercive fields (EC) of Pb(In0.5Nb 0.5)O3- Pb(Mg1/3Nb2/3)O 3-PbTiO3 (PIN-PMN-PT) ternary single crystals were found to be 5 kV/cm, double the value of binary Pb(Mg1/3Nb 2/3)O3-PbTiO3 (PMNT) crystals, further increased to 6 to 9 kV/cm using Mn modifications. In addition to an increased EC, the acceptor modification resulted in the developed internal bias (Eint), on the order of ∼1 kV/cm. The piezoelectric shear properties of unmodified and Mn-modified PIN-PMN-PT crystals with various domain configurations were investigated. The shear piezoelectric coefficients and electromechanical coupling factors for different domain configurations were found to be >2000 pC/N and >0.85, respectively, with slightly reduced properties observed in Mn-modified tetragonal crystals. Fatigue/cycling tests performed on shearmode samples as a function of ac drive field level demonstrated that the allowable ac field levels (the maximum applied ac field before the occurrence of depolarization) were only ∼2 kV/cm for unmodified crystals, less than half of their coercive field. Allowable ac drive levels were on the order of 4 to 6 kV/cm for Mn-modified crystals with rhombohedral/ orthorhombic phase, further increased to 5 to 8 kV/cm in tetragonal crystals, because of their higher coercive fields. It is of particular interest that the allowable ac drive field level for Mn-modified crystals was found to be ≥60% of their coercive fields, because of the developed Eint, induced by the acceptor-oxygen vacancy defect dipoles.
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U2 - 10.1109/TUFFC.2011.1804
DO - 10.1109/TUFFC.2011.1804
M3 - Article
C2 - 21342812
AN - SCOPUS:79952030869
SN - 0885-3010
VL - 58
SP - 274
EP - 280
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 2
M1 - 5716444
ER -