TY - GEN
T1 - Film bulk acoustic-wave resonator based radiation sensor
AU - Oiler, Jonathon
AU - Qiu, Xiaotun
AU - Zhu, Jie
AU - Wang, Ziyu
AU - Yu, Cunjiang
AU - Barnaby, Hugh
AU - Holbert, Keith
AU - Yu, Hongyu
PY - 2010
Y1 - 2010
N2 - This paper describes a high-energy electromagnetic wave radiation detection device using zinc oxide (ZnO) based Film Bulk Acoustic-Wave Resonator (FBAR). The resonant frequency of the FBAR decreased after gamma radiation, with the peak sensitivity of 9.3 kHz/krad and minimum detectable dosage of 218 rad occurring at the lowest experimental dose of 20 krad (all dosages are calibrated with ZnO), while the sensitivity decreased with increasing total ionizing dosage. The incident radiation generated charges that was trapped near the ZnO-silicon nitride (SiN) interface, which increased the plate capacitance of the FBAR, resulting in the decrease of resonant frequency.
AB - This paper describes a high-energy electromagnetic wave radiation detection device using zinc oxide (ZnO) based Film Bulk Acoustic-Wave Resonator (FBAR). The resonant frequency of the FBAR decreased after gamma radiation, with the peak sensitivity of 9.3 kHz/krad and minimum detectable dosage of 218 rad occurring at the lowest experimental dose of 20 krad (all dosages are calibrated with ZnO), while the sensitivity decreased with increasing total ionizing dosage. The incident radiation generated charges that was trapped near the ZnO-silicon nitride (SiN) interface, which increased the plate capacitance of the FBAR, resulting in the decrease of resonant frequency.
UR - http://www.scopus.com/inward/record.url?scp=78649269186&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649269186&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2010.5592605
DO - 10.1109/NEMS.2010.5592605
M3 - Conference contribution
AN - SCOPUS:78649269186
SN - 9781424465439
T3 - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
SP - 967
EP - 970
BT - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
T2 - 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Y2 - 20 January 2010 through 23 January 2010
ER -