Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor

X. Qiu, J. Zhu, J. Oiler, C. Yu, Z. Wang, H. Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.

Original languageEnglish (US)
Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages2354-2357
Number of pages4
DOIs
StatePublished - 2009
EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
Duration: Jun 21 2009Jun 25 2009

Publication series

NameTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country/TerritoryUnited States
CityDenver, CO
Period6/21/096/25/09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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