Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

J. M. Hu, L. Shu, Z. Li, Y. Gao, Y. Shen, Y. H. Lin, L. Q. Chen, C. W. Nan

Research output: Contribution to journalReview articlepeer-review

24 Scopus citations


The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology.

Original languageEnglish (US)
Article number20120444
JournalPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
Issue number2009
StatePublished - Feb 28 2014

All Science Journal Classification (ASJC) codes

  • General Mathematics
  • General Engineering
  • General Physics and Astronomy


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