First Demonstration of WSe2 Based CMOS-SRAM

Chin Sheng Pang; Niharika Thakuria; Sumeet Kumar Gupta; Zhihong Chen

doi:10.1109/IEDM.2018.8614572

First Demonstration of WSe₂ Based CMOS-SRAM

Chin Sheng Pang, Niharika Thakuria, Sumeet Kumar Gupta, Zhihong Chen

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

25 Scopus citations

Abstract

In this work, we demonstrate a CMOS static random-access-memory (SRAM) using WSe₂ as a channel material for the first time, providing comprehensive DC analyses for transition metal dichalcogenide (TMD) material-based memory applications. A tri-gate design is adopted for the n-type MOSFET, while an air-stable, oxygen plasma induced doping scheme is introduced to implement the p-type MOSFET. DC measurements of SRAM cells demonstrate a unique dynamic tunability enabled by modulating the n-FET doping level through electrostatically gating the extended source/drain regions. Furthermore, with various read/write assist techniques, SRAM operation at low V DD of 0.8V is achieved. Our low power demonstration and its 2D ultra-thin material nature suggest promising applications of WSe₂ for flexible electronics and Internet of Things (IoT).

Original language	English (US)
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	22.2.1-22.2.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614572
State	Published - Jul 2 2018
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: Dec 1 2018 → Dec 5 2018

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	12/1/18 → 12/5/18

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2018.8614572

Cite this

Pang, C. S., Thakuria, N., Gupta, S. K., & Chen, Z. (2018). First Demonstration of WSe₂ Based CMOS-SRAM. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 22.2.1-22.2.4). Article 8614572 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614572

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title = "First Demonstration of WSe2 Based CMOS-SRAM",

abstract = "In this work, we demonstrate a CMOS static random-access-memory (SRAM) using WSe2 as a channel material for the first time, providing comprehensive DC analyses for transition metal dichalcogenide (TMD) material-based memory applications. A tri-gate design is adopted for the n-type MOSFET, while an air-stable, oxygen plasma induced doping scheme is introduced to implement the p-type MOSFET. DC measurements of SRAM cells demonstrate a unique dynamic tunability enabled by modulating the n-FET doping level through electrostatically gating the extended source/drain regions. Furthermore, with various read/write assist techniques, SRAM operation at low V DD of 0.8V is achieved. Our low power demonstration and its 2D ultra-thin material nature suggest promising applications of WSe2 for flexible electronics and Internet of Things (IoT).",

author = "Pang, {Chin Sheng} and Niharika Thakuria and Gupta, {Sumeet Kumar} and Zhihong Chen",

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Pang, CS, Thakuria, N, Gupta, SK & Chen, Z 2018, First Demonstration of WSe₂ Based CMOS-SRAM. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614572, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 22.2.1-22.2.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 12/1/18. https://doi.org/10.1109/IEDM.2018.8614572

First Demonstration of WSe₂ Based CMOS-SRAM. / Pang, Chin Sheng; Thakuria, Niharika; Gupta, Sumeet Kumar et al.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 22.2.1-22.2.4 8614572 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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