First Demonstration of WSe2 Based CMOS-SRAM

Chin Sheng Pang, Niharika Thakuria, Sumeet Kumar Gupta, Zhihong Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Scopus citations

Abstract

In this work, we demonstrate a CMOS static random-access-memory (SRAM) using WSe2 as a channel material for the first time, providing comprehensive DC analyses for transition metal dichalcogenide (TMD) material-based memory applications. A tri-gate design is adopted for the n-type MOSFET, while an air-stable, oxygen plasma induced doping scheme is introduced to implement the p-type MOSFET. DC measurements of SRAM cells demonstrate a unique dynamic tunability enabled by modulating the n-FET doping level through electrostatically gating the extended source/drain regions. Furthermore, with various read/write assist techniques, SRAM operation at low V DD of 0.8V is achieved. Our low power demonstration and its 2D ultra-thin material nature suggest promising applications of WSe2 for flexible electronics and Internet of Things (IoT).

Original languageEnglish (US)
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22.2.1-22.2.4
ISBN (Electronic)9781728119878
DOIs
StatePublished - Jul 2 2018
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: Dec 1 2018Dec 5 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/TerritoryUnited States
CitySan Francisco
Period12/1/1812/5/18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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