First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride

P. M. Lenahan; Sean E. Curry

doi:10.1063/1.103278

First observation of the ²⁹Si hyperfine spectra of silicon dangling bond centers in silicon nitride

P. M. Lenahan, Sean E. Curry

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105 Scopus citations

Abstract

We report the first observation of ²⁹Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon "dangling bond" defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.

Original language	English (US)
Pages (from-to)	157-159
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	2
DOIs	https://doi.org/10.1063/1.103278
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103278

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title = "First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride",

abstract = "We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon {"}dangling bond{"} defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.",

author = "Lenahan, {P. M.} and Curry, {Sean E.}",

year = "1990",

doi = "10.1063/1.103278",

language = "English (US)",

volume = "56",

pages = "157--159",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

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T1 - First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride

AU - Lenahan, P. M.

AU - Curry, Sean E.

PY - 1990

Y1 - 1990

N2 - We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon "dangling bond" defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.

AB - We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon "dangling bond" defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.

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U2 - 10.1063/1.103278

DO - 10.1063/1.103278

M3 - Article

AN - SCOPUS:51149202942

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VL - 56

SP - 157

EP - 159

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

First observation of the ²⁹Si hyperfine spectra of silicon dangling bond centers in silicon nitride

Abstract

All Science Journal Classification (ASJC) codes

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