TY - GEN
T1 - Flexible and Ultra-Thin Glass Substrates for RF Applications
AU - Sivapurapu, Sridhar
AU - Chen, Rui
AU - ur Rehman, Mutee
AU - Kanno, Kimiyuki
AU - Kakutani, Takenori
AU - Letz, Martin
AU - Liu, Fuhan
AU - Sitaraman, Suresh K.
AU - Swaminathan, Madhavan
N1 - Publisher Copyright:
© 2021 IEEE
PY - 2021
Y1 - 2021
N2 - Glass has been shown to be a capable core substrate material for high frequency applications. In this paper we examine the capabilities of ultra-thin glass as a flexible material that can be used for high frequency flexible applications. The two stack-ups discussed in this paper are 60 μm in total thickness with a core glass substrate (Schott AF32) of 30 μm thickness. One stack-up uses 15 μm JSR GT-N01 as a buildup dielectric and the other uses 15 μm Taiyo Photo Imageable Dielectric. Since neither of these stack-ups have previously been electrically characterized, this paper characterizes both stack-ups up to 110 GHz using microstrip ring resonators (MRRs) and conductor backed coplanar waveguides (CBCPWs). Based on the characterization results, these stack-ups compare favorably against other stack-ups used for applications in this frequency range. After completing the electrical characterization, the Taiyo PID stack-up is also mechanically characterized for its flexibility using Free Arc Bending. The Free Arc Bending test shows that the ultra-thin glass stack-up is suitable for high frequency bending applications as the tested samples are capable of bending up to a separation of 33% of the sample's total length, displaying the capabilities of this ultra-thin glass substrate as a good candidate for a flexible substrate.
AB - Glass has been shown to be a capable core substrate material for high frequency applications. In this paper we examine the capabilities of ultra-thin glass as a flexible material that can be used for high frequency flexible applications. The two stack-ups discussed in this paper are 60 μm in total thickness with a core glass substrate (Schott AF32) of 30 μm thickness. One stack-up uses 15 μm JSR GT-N01 as a buildup dielectric and the other uses 15 μm Taiyo Photo Imageable Dielectric. Since neither of these stack-ups have previously been electrically characterized, this paper characterizes both stack-ups up to 110 GHz using microstrip ring resonators (MRRs) and conductor backed coplanar waveguides (CBCPWs). Based on the characterization results, these stack-ups compare favorably against other stack-ups used for applications in this frequency range. After completing the electrical characterization, the Taiyo PID stack-up is also mechanically characterized for its flexibility using Free Arc Bending. The Free Arc Bending test shows that the ultra-thin glass stack-up is suitable for high frequency bending applications as the tested samples are capable of bending up to a separation of 33% of the sample's total length, displaying the capabilities of this ultra-thin glass substrate as a good candidate for a flexible substrate.
UR - https://www.scopus.com/pages/publications/85124668461
UR - https://www.scopus.com/pages/publications/85124668461#tab=citedBy
U2 - 10.1109/ECTC32696.2021.00260
DO - 10.1109/ECTC32696.2021.00260
M3 - Conference contribution
AN - SCOPUS:85124668461
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1638
EP - 1644
BT - Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 71st IEEE Electronic Components and Technology Conference, ECTC 2021
Y2 - 1 June 2021 through 4 July 2021
ER -