Flexible plastic substrate ZnO thin film transistor circuits

Dalong A. Zhao, Devin A. Mourey, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400 °C on GaAs substrates have demonstrated mobility over 100 cm2/V·s [1], and five-stage ring oscillators based on 0.5 μm gate length indiumgallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators [2].

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Number of pages2
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other67th Device Research Conference, DRC 2009
Country/TerritoryUnited States
CityUniversity Park, PA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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