@inproceedings{58b6e6d6ef12470f91e4372a9bda3727,
title = "Flexible plastic substrate ZnO thin film transistor circuits",
abstract = "Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400 °C on GaAs substrates have demonstrated mobility over 100 cm2/V·s [1], and five-stage ring oscillators based on 0.5 μm gate length indiumgallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators [2].",
author = "Zhao, {Dalong A.} and Mourey, {Devin A.} and Jackson, {Thomas N.}",
year = "2009",
month = dec,
day = "11",
doi = "10.1109/DRC.2009.5354938",
language = "English (US)",
isbn = "9781424435289",
series = "Device Research Conference - Conference Digest, DRC",
pages = "177--178",
booktitle = "67th Device Research Conference, DRC 2009",
note = "67th Device Research Conference, DRC 2009 ; Conference date: 22-06-2009 Through 24-06-2009",
}