TY - GEN
T1 - Flexible substrate a-Si:H TFTs for space applications
AU - Zhou, Lisong
AU - Jackson, Tom
AU - Brandon, Erik
AU - West, William
PY - 2004
Y1 - 2004
N2 - The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT) were fabricated on Kapton® polyamide flexible substrates and their response to deployment-like mechanical stresses and to radiation exposure was characterized. a-Si:H THTs fabricated on 50 μm thick Kapton® substrates were exposed to fast electron irradiation with a 1 Mrad dose. More than 90% of THTs survived and ∼70% of the TFTs showed only minor changes in field-effect mobility, threshold voltage and sub-threshold slope. Device function was retained even after 1 Mrad fast electron irradiation, and irradiation-induced devices changes were removed by low-temperature thermal annealing.
AB - The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT) were fabricated on Kapton® polyamide flexible substrates and their response to deployment-like mechanical stresses and to radiation exposure was characterized. a-Si:H THTs fabricated on 50 μm thick Kapton® substrates were exposed to fast electron irradiation with a 1 Mrad dose. More than 90% of THTs survived and ∼70% of the TFTs showed only minor changes in field-effect mobility, threshold voltage and sub-threshold slope. Device function was retained even after 1 Mrad fast electron irradiation, and irradiation-induced devices changes were removed by low-temperature thermal annealing.
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U2 - 10.1109/DRC.2004.1367814
DO - 10.1109/DRC.2004.1367814
M3 - Conference contribution
AN - SCOPUS:18044385762
SN - 0780382846
T3 - Device Research Conference - Conference Digest, DRC
SP - 123
EP - 124
BT - Device Research Conference - Conference Digest, 62nd DRC
T2 - Device Research Conference - Conference Digest, 62nd DRC
Y2 - 21 June 2004 through 23 June 2004
ER -