Flexible substrate a-Si:H TFTs for space applications

Lisong Zhou, Tom Jackson, Erik Brandon, William West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations


The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT) were fabricated on Kapton® polyamide flexible substrates and their response to deployment-like mechanical stresses and to radiation exposure was characterized. a-Si:H THTs fabricated on 50 μm thick Kapton® substrates were exposed to fast electron irradiation with a 1 Mrad dose. More than 90% of THTs survived and ∼70% of the TFTs showed only minor changes in field-effect mobility, threshold voltage and sub-threshold slope. Device function was retained even after 1 Mrad fast electron irradiation, and irradiation-induced devices changes were removed by low-temperature thermal annealing.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Number of pages2
StatePublished - 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


OtherDevice Research Conference - Conference Digest, 62nd DRC
Country/TerritoryUnited States
CityNotre Dame, IN

All Science Journal Classification (ASJC) codes

  • General Engineering


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