TY - JOUR
T1 - Flicker-noise improvement in 100-nm LgSi0.50Ge 0.50 strained quantum-well transistors using ultrathin si cap Layer
AU - Li, Feng
AU - Lee, Se Hoon
AU - Fang, Zhao
AU - Majhi, Prashant
AU - Zhang, Qiming
AU - Banerjee, Sanjay K.
AU - Datta, Suman
N1 - Funding Information:
Manuscript received September 25, 2009. First published November 20, 2009; current version published December 23, 2009. This work was supported by the National Science Foundation under Grant 0824202. The review of this letter was arranged by Editor L. Selmi. F. Li, Z. Fang, Q. Zhang, and S. Datta are with the Department of Electrical Engineering, The Pennsylvania State University, PA 16802 USA (e-mail: [email protected]). S.-H. Lee is with International Sematech, Austin, TX 78741 USA, and also with The University of Texas at Austin, TX 78758 USA. P. Majhi is with International Sematech, Austin, TX 78741 USA. S. K. Banerjee is with The University of Texas at Austin, TX 78758 USA. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2009.2035140
PY - 2010/1
Y1 - 2010/1
N2 - This letter presents a record low flicker-noise spectral density in biaxial compressively strained p-channel 100-nm LgSi0.50Ge 0.50 quantum-well FETs (QWFETs) with ultrathin Si (∼2 nm) barrier layer and 1-nm EOT hafnium silicate gate dielectric. The normalized power spectral density of Id fluctuations SId/Id 2 in Si0.50Ge0.50 QWFETs exhibits significant improvement by ten times over surface channel unstrained Si pMOSFETs at high Vg due to strong confinement of holes within the high-mobility QW and strong quantization in the ultrathin Si barrier layer enabled by low-thermal-budget device processing. The noise behavior in strained QW devices is found to evolve from being correlated mobility fluctuation dominated across most of Vg range to being Hooge mobility fluctuation dominated at very high Vg.
AB - This letter presents a record low flicker-noise spectral density in biaxial compressively strained p-channel 100-nm LgSi0.50Ge 0.50 quantum-well FETs (QWFETs) with ultrathin Si (∼2 nm) barrier layer and 1-nm EOT hafnium silicate gate dielectric. The normalized power spectral density of Id fluctuations SId/Id 2 in Si0.50Ge0.50 QWFETs exhibits significant improvement by ten times over surface channel unstrained Si pMOSFETs at high Vg due to strong confinement of holes within the high-mobility QW and strong quantization in the ultrathin Si barrier layer enabled by low-thermal-budget device processing. The noise behavior in strained QW devices is found to evolve from being correlated mobility fluctuation dominated across most of Vg range to being Hooge mobility fluctuation dominated at very high Vg.
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U2 - 10.1109/LED.2009.2035140
DO - 10.1109/LED.2009.2035140
M3 - Article
AN - SCOPUS:72949083950
SN - 0741-3106
VL - 31
SP - 47
EP - 49
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 1
M1 - 5339241
ER -