Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM

Ming Liu; Qi Liu; Shibing Long; Weihua Guan

doi:10.1109/ISCAS.2010.5537156

Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO₂:Cu/Pt ReRAM

Ming Liu, Qi Liu, Shibing Long, Weihua Guan

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

We report a ZrO₂-based resistive memory composed of a thin Cu doped ZrO₂ layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO₂:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 ⁶), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

Original language	English (US)
Title of host publication	ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems
Subtitle of host publication	Nano-Bio Circuit Fabrics and Systems
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2010.5537156
State	Published - 2010
Event	2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010 - Paris, France Duration: May 30 2010 → Jun 2 2010

Publication series

Name	ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Other

Other	2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010
Country/Territory	France
City	Paris
Period	5/30/10 → 6/2/10

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ISCAS.2010.5537156

Cite this

Liu, M., Liu, Q., Long, S., & Guan, W. (2010). Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO₂:Cu/Pt ReRAM. In ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems (pp. 1-4). Article 5537156 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems). https://doi.org/10.1109/ISCAS.2010.5537156

Liu, Ming ; Liu, Qi ; Long, Shibing et al. / Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO₂:Cu/Pt ReRAM. ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. pp. 1-4 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems).

@inproceedings{7e241d68f02b4a6f8bc31ce045c27f50,

title = "Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM",

abstract = "We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 6), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.",

author = "Ming Liu and Qi Liu and Shibing Long and Weihua Guan",

year = "2010",

doi = "10.1109/ISCAS.2010.5537156",

language = "English (US)",

isbn = "9781424453085",

series = "ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems",

pages = "1--4",

booktitle = "ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems",

note = "2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010 ; Conference date: 30-05-2010 Through 02-06-2010",

}

Liu, M, Liu, Q, Long, S & Guan, W 2010, Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO₂:Cu/Pt ReRAM. in ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems., 5537156, ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, pp. 1-4, 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010, Paris, France, 5/30/10. https://doi.org/10.1109/ISCAS.2010.5537156

Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO₂:Cu/Pt ReRAM. / Liu, Ming; Liu, Qi; Long, Shibing et al.
ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. p. 1-4 5537156 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM

AU - Liu, Ming

AU - Liu, Qi

AU - Long, Shibing

AU - Guan, Weihua

PY - 2010

Y1 - 2010

N2 - We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 6), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

AB - We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 6), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

UR - http://www.scopus.com/inward/record.url?scp=77955997441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955997441&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2010.5537156

DO - 10.1109/ISCAS.2010.5537156

M3 - Conference contribution

AN - SCOPUS:77955997441

SN - 9781424453085

T3 - ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

SP - 1

EP - 4

BT - ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems

T2 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010

Y2 - 30 May 2010 through 2 June 2010

ER -

Liu M, Liu Q, Long S, Guan W. Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO₂:Cu/Pt ReRAM. In ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. p. 1-4. 5537156. (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems). doi: 10.1109/ISCAS.2010.5537156