Formation of silicon nanocrystals embedded in high- κ dielectric HfO2 and their application for charge storage

Weilong Li; Rui Jia; Chen Chen; Haofeng Li; Xinyu Liu; Huihui Yue; Wuchang Ding; Tianchun Ye; Seiya Kasai; Tamotsu Hashizume; Nanjian Wu; Bingshe Xu

doi:10.1116/1.3554736

Formation of silicon nanocrystals embedded in high- κ dielectric HfO₂ and their application for charge storage

Weilong Li, Rui Jia, Chen Chen, Haofeng Li, Xinyu Liu, Huihui Yue, Wuchang Ding, Tianchun Ye, Seiya Kasai, Tamotsu Hashizume, Nanjian Wu, Bingshe Xu

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

Abstract

Annealing thin films of silicon containing HfO₂ films deposited by an electron-beam coevaporation produces silicon nanocrystals embedded in high- κ dielectric HfO₂. Such films can be used to fabricate nonvolatile memory devices. By changing the Si content in the precursor HfSi_x O₂ (x=1, 2, 3, or 4) film, the size and density of silicon nanocrystal could be controlled and high-density of silicon nanocrystals could be obtained. Transmission electron microscopy observations showed that the maximum density of silicon nanocrystals was as high as 1.3× 1013 cm-2 for HfSi₄ O₂ and the average nanocrystal diameter was 4.3 nm. The metal-oxide semiconductor capacitor memory structure with embedded silicon nanocrystals in HfSi₄ O₂ exhibited the largest memory window, 3.94 V under ±5 V sweep voltage.

Original language	English (US)
Article number	021018
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	2
DOIs	https://doi.org/10.1116/1.3554736
State	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.3554736

Cite this

@article{d74255c52e4a4979b6a0aa031bd2a92c,

title = "Formation of silicon nanocrystals embedded in high- κ dielectric HfO2 and their application for charge storage",

abstract = "Annealing thin films of silicon containing HfO2 films deposited by an electron-beam coevaporation produces silicon nanocrystals embedded in high- κ dielectric HfO2. Such films can be used to fabricate nonvolatile memory devices. By changing the Si content in the precursor HfSix O2 (x=1, 2, 3, or 4) film, the size and density of silicon nanocrystal could be controlled and high-density of silicon nanocrystals could be obtained. Transmission electron microscopy observations showed that the maximum density of silicon nanocrystals was as high as 1.3× 1013 cm-2 for HfSi4 O2 and the average nanocrystal diameter was 4.3 nm. The metal-oxide semiconductor capacitor memory structure with embedded silicon nanocrystals in HfSi4 O2 exhibited the largest memory window, 3.94 V under ±5 V sweep voltage.",

author = "Weilong Li and Rui Jia and Chen Chen and Haofeng Li and Xinyu Liu and Huihui Yue and Wuchang Ding and Tianchun Ye and Seiya Kasai and Tamotsu Hashizume and Nanjian Wu and Bingshe Xu",

note = "Funding Information: This work was subsidized by the 973 Projects under Grant Nos. 2006CB604904 and 2009CB939703, by the Chinese NSF under Grant Nos. 60706023, 60676001, and 60977050, by 100 Talents Programme and Knowledge Innovation Project of the Chinese Academy of Sciences (CAS), and by solar energy action plan of the CAS. Also this work was also subsidized by PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012, Japan.",

year = "2011",

doi = "10.1116/1.3554736",

language = "English (US)",

volume = "29",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Formation of silicon nanocrystals embedded in high- κ dielectric HfO2 and their application for charge storage

AU - Li, Weilong

AU - Jia, Rui

AU - Chen, Chen

AU - Li, Haofeng

AU - Liu, Xinyu

AU - Yue, Huihui

AU - Ding, Wuchang

AU - Ye, Tianchun

AU - Kasai, Seiya

AU - Hashizume, Tamotsu

AU - Wu, Nanjian

AU - Xu, Bingshe

N1 - Funding Information: This work was subsidized by the 973 Projects under Grant Nos. 2006CB604904 and 2009CB939703, by the Chinese NSF under Grant Nos. 60706023, 60676001, and 60977050, by 100 Talents Programme and Knowledge Innovation Project of the Chinese Academy of Sciences (CAS), and by solar energy action plan of the CAS. Also this work was also subsidized by PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012, Japan.

PY - 2011

Y1 - 2011

N2 - Annealing thin films of silicon containing HfO2 films deposited by an electron-beam coevaporation produces silicon nanocrystals embedded in high- κ dielectric HfO2. Such films can be used to fabricate nonvolatile memory devices. By changing the Si content in the precursor HfSix O2 (x=1, 2, 3, or 4) film, the size and density of silicon nanocrystal could be controlled and high-density of silicon nanocrystals could be obtained. Transmission electron microscopy observations showed that the maximum density of silicon nanocrystals was as high as 1.3× 1013 cm-2 for HfSi4 O2 and the average nanocrystal diameter was 4.3 nm. The metal-oxide semiconductor capacitor memory structure with embedded silicon nanocrystals in HfSi4 O2 exhibited the largest memory window, 3.94 V under ±5 V sweep voltage.

AB - Annealing thin films of silicon containing HfO2 films deposited by an electron-beam coevaporation produces silicon nanocrystals embedded in high- κ dielectric HfO2. Such films can be used to fabricate nonvolatile memory devices. By changing the Si content in the precursor HfSix O2 (x=1, 2, 3, or 4) film, the size and density of silicon nanocrystal could be controlled and high-density of silicon nanocrystals could be obtained. Transmission electron microscopy observations showed that the maximum density of silicon nanocrystals was as high as 1.3× 1013 cm-2 for HfSi4 O2 and the average nanocrystal diameter was 4.3 nm. The metal-oxide semiconductor capacitor memory structure with embedded silicon nanocrystals in HfSi4 O2 exhibited the largest memory window, 3.94 V under ±5 V sweep voltage.

UR - http://www.scopus.com/inward/record.url?scp=79953775553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953775553&partnerID=8YFLogxK

U2 - 10.1116/1.3554736

DO - 10.1116/1.3554736

M3 - Article

AN - SCOPUS:79953775553

SN - 2166-2746

VL - 29

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 2

M1 - 021018

ER -

Formation of silicon nanocrystals embedded in high- κ dielectric HfO₂ and their application for charge storage

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this