Formation of ternary Co1-xPdxSi2 on Si (100) by Pd ion implantation in CoSi2/Si (100) heterostructures

U. Tisch, B. Holländer, M. Hacke, St Mesters, W. Michelsen, D. Guggi, S. Mantl, B. Kabius

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Single crystalline metal/silicon heterostructures, such as CoSi2 on Si (100), are promising materials for microelectronic and optoelectronic applications. The crystalline perfection of epitaxial CoSi2/Si (100) heterostructures is limited by the lattice mismatch of -1.2% between CoSi2 and Si, leading to the formation of misfit and threading dislocations as a result of elastic strain in the layer. In the present work, a first attempt was made to reduce the lattice mismatch by substituting a few percent of the Co atoms by Pd, which has a larger covalent radius than Co. Single crystalline CoSi2/Si (100) heterostructures with a suicide thickness of about 130 nm were implanted at 450°C with 260 keV Pd+ ions. The doses were varied between 4.6 × 1015 and 2.8 × 1016/cm2. Rapid thermal annealing was employed to homogenize the Pd distribution within the silicide layer. The samples were characterized using Rutherford backscattering spectrometry, transmission electron microscopy, electrical resistivity measurements and X-ray diffraction. The results show that up to 2% of the Co atoms can be replaced by substitutional Pd atoms. The ternary suicide layers exhibit channeling minimum yields of 3-5%. Larger Pd concentrations lead to the precipitation of PdSi as a second phase.

Original languageEnglish (US)
Pages (from-to)324-327
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
StatePublished - May 1997

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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