From 1D to 3D: Tunable Sub-10 nm Gaps in Large Area Devices

Ziwei Zhou; Zhiyuan Zhao; Ye Yu; Bin Ai; Helmuth Möhwald; Ryan C. Chiechi; Joel K.W. Yang; Gang Zhang

doi:10.1002/adma.201505929

From 1D to 3D: Tunable Sub-10 nm Gaps in Large Area Devices

Ziwei Zhou
, Zhiyuan Zhao
, Ye Yu
, Bin Ai
, Helmuth Möhwald
, Ryan C. Chiechi
, Joel K.W. Yang
, Gang Zhang

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

Tunable sub-10 nm 1D nanogaps are fabricated based on nanoskiving. The electric field in different sized nanogaps is investigated theoretically and experimentally, yielding nonmonotonic dependence and an optimized gap-width (5 nm). 2D nanogap arrays are fabricated to pack denser gaps combining surface patterning techniques. Innovatively, 3D multistory nanogaps are built via a stacking procedure, processing higher integration, and much improved electric field.

Original language	English (US)
Pages (from-to)	2956-2963
Number of pages	8
Journal	Advanced Materials
Volume	28
Issue number	15
DOIs	https://doi.org/10.1002/adma.201505929
State	Published - Apr 20 2016

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201505929

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abstract = "Tunable sub-10 nm 1D nanogaps are fabricated based on nanoskiving. The electric field in different sized nanogaps is investigated theoretically and experimentally, yielding nonmonotonic dependence and an optimized gap-width (5 nm). 2D nanogap arrays are fabricated to pack denser gaps combining surface patterning techniques. Innovatively, 3D multistory nanogaps are built via a stacking procedure, processing higher integration, and much improved electric field.",

author = "Ziwei Zhou and Zhiyuan Zhao and Ye Yu and Bin Ai and Helmuth M{\"o}hwald and Chiechi, \{Ryan C.\} and Yang, \{Joel K.W.\} and Gang Zhang",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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T2 - Tunable Sub-10 nm Gaps in Large Area Devices

AU - Zhou, Ziwei

AU - Zhao, Zhiyuan

AU - Yu, Ye

AU - Ai, Bin

AU - Möhwald, Helmuth

AU - Chiechi, Ryan C.

AU - Yang, Joel K.W.

AU - Zhang, Gang

PY - 2016/4/20

Y1 - 2016/4/20

N2 - Tunable sub-10 nm 1D nanogaps are fabricated based on nanoskiving. The electric field in different sized nanogaps is investigated theoretically and experimentally, yielding nonmonotonic dependence and an optimized gap-width (5 nm). 2D nanogap arrays are fabricated to pack denser gaps combining surface patterning techniques. Innovatively, 3D multistory nanogaps are built via a stacking procedure, processing higher integration, and much improved electric field.

AB - Tunable sub-10 nm 1D nanogaps are fabricated based on nanoskiving. The electric field in different sized nanogaps is investigated theoretically and experimentally, yielding nonmonotonic dependence and an optimized gap-width (5 nm). 2D nanogap arrays are fabricated to pack denser gaps combining surface patterning techniques. Innovatively, 3D multistory nanogaps are built via a stacking procedure, processing higher integration, and much improved electric field.

UR - https://www.scopus.com/pages/publications/84976209216

UR - https://www.scopus.com/pages/publications/84976209216#tab=citedBy

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JO - Advanced Materials

JF - Advanced Materials

IS - 15

ER -

From 1D to 3D: Tunable Sub-10 nm Gaps in Large Area Devices

Abstract

All Science Journal Classification (ASJC) codes

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