Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy

Felix V.E. Hensling; Patrick Vogt; Jisung Park; Shun Li Shang; Huacheng Ye; Yu Mi Wu; Kathleen Smith; Veronica Show; Kathy Azizie; Hanjong Paik; Debdeep Jena; Huili G. Xing; Y. Eren Suyolcu; Peter A. van Aken; Suman Datta; Zi Kui Liu; Darrell G. Schlom

doi:10.1002/aelm.202400499

Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy

Felix V.E. Hensling, Patrick Vogt, Jisung Park, Shun Li Shang, Huacheng Ye, Yu Mi Wu, Kathleen Smith, Veronica Show, Kathy Azizie, Hanjong Paik, Debdeep Jena, Huili G. Xing, Y. Eren Suyolcu, Peter A. van Aken, Suman Datta, Zi Kui Liu, Darrell G. Schlom

Research output: Contribution to journal › Article › peer-review

Abstract

Transparent oxide thin film transistors (TFTs) are an important ingredient of transparent electronics. Their fabrication at the back-end-of-line (BEOL) opens the door to novel strategies to more closely integrate logic with memory for data-intensive computing architectures that overcome the scaling challenges of today's integrated circuits. A recently developed variant of molecular-beam epitaxy (MBE) called suboxide MBE (S-MBE) is demonstrated to be capable of growing epitaxial In₂O₃ at BEOL temperatures with unmatched crystal quality. The fullwidth at halfmaximum of the rocking curve is 0.015° and, thus, ≈5x narrower than any reports at any temperature to date and limited by the substrate quality. The key to achieving these results is the provision of an In₂O beam by S-MBE, which enables growth in adsorption control and is kinetically favorable. To benchmark this deposition method for TFTs, rudimentary devices were fabricated.

Original language	English (US)
Article number	2400499
Journal	Advanced Electronic Materials
Volume	11
Issue number	3
DOIs	https://doi.org/10.1002/aelm.202400499
State	Published - Mar 2025

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1002/aelm.202400499

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Hensling, F. V. E., Vogt, P., Park, J., Shang, S. L., Ye, H., Wu, Y. M., Smith, K., Show, V., Azizie, K., Paik, H., Jena, D., Xing, H. G., Suyolcu, Y. E., van Aken, P. A., Datta, S., Liu, Z. K., & Schlom, D. G. (2025). Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy. Advanced Electronic Materials, 11(3), Article 2400499. https://doi.org/10.1002/aelm.202400499

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title = "Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy",

abstract = "Transparent oxide thin film transistors (TFTs) are an important ingredient of transparent electronics. Their fabrication at the back-end-of-line (BEOL) opens the door to novel strategies to more closely integrate logic with memory for data-intensive computing architectures that overcome the scaling challenges of today's integrated circuits. A recently developed variant of molecular-beam epitaxy (MBE) called suboxide MBE (S-MBE) is demonstrated to be capable of growing epitaxial In2O3 at BEOL temperatures with unmatched crystal quality. The fullwidth at halfmaximum of the rocking curve is 0.015° and, thus, ≈5x narrower than any reports at any temperature to date and limited by the substrate quality. The key to achieving these results is the provision of an In2O beam by S-MBE, which enables growth in adsorption control and is kinetically favorable. To benchmark this deposition method for TFTs, rudimentary devices were fabricated.",

author = "Hensling, {Felix V.E.} and Patrick Vogt and Jisung Park and Shang, {Shun Li} and Huacheng Ye and Wu, {Yu Mi} and Kathleen Smith and Veronica Show and Kathy Azizie and Hanjong Paik and Debdeep Jena and Xing, {Huili G.} and Suyolcu, {Y. Eren} and {van Aken}, {Peter A.} and Suman Datta and Liu, {Zi Kui} and Schlom, {Darrell G.}",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.",

year = "2025",

month = mar,

doi = "10.1002/aelm.202400499",

language = "English (US)",

volume = "11",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

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Hensling, FVE, Vogt, P, Park, J, Shang, SL, Ye, H, Wu, YM, Smith, K, Show, V, Azizie, K, Paik, H, Jena, D, Xing, HG, Suyolcu, YE, van Aken, PA, Datta, S, Liu, ZK & Schlom, DG 2025, 'Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy', Advanced Electronic Materials, vol. 11, no. 3, 2400499. https://doi.org/10.1002/aelm.202400499

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T1 - Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy

AU - Hensling, Felix V.E.

AU - Vogt, Patrick

AU - Park, Jisung

AU - Shang, Shun Li

AU - Ye, Huacheng

AU - Wu, Yu Mi

AU - Smith, Kathleen

AU - Show, Veronica

AU - Azizie, Kathy

AU - Paik, Hanjong

AU - Jena, Debdeep

AU - Xing, Huili G.

AU - Suyolcu, Y. Eren

AU - van Aken, Peter A.

AU - Datta, Suman

AU - Liu, Zi Kui

AU - Schlom, Darrell G.

PY - 2025/3

Y1 - 2025/3

N2 - Transparent oxide thin film transistors (TFTs) are an important ingredient of transparent electronics. Their fabrication at the back-end-of-line (BEOL) opens the door to novel strategies to more closely integrate logic with memory for data-intensive computing architectures that overcome the scaling challenges of today's integrated circuits. A recently developed variant of molecular-beam epitaxy (MBE) called suboxide MBE (S-MBE) is demonstrated to be capable of growing epitaxial In2O3 at BEOL temperatures with unmatched crystal quality. The fullwidth at halfmaximum of the rocking curve is 0.015° and, thus, ≈5x narrower than any reports at any temperature to date and limited by the substrate quality. The key to achieving these results is the provision of an In2O beam by S-MBE, which enables growth in adsorption control and is kinetically favorable. To benchmark this deposition method for TFTs, rudimentary devices were fabricated.

AB - Transparent oxide thin film transistors (TFTs) are an important ingredient of transparent electronics. Their fabrication at the back-end-of-line (BEOL) opens the door to novel strategies to more closely integrate logic with memory for data-intensive computing architectures that overcome the scaling challenges of today's integrated circuits. A recently developed variant of molecular-beam epitaxy (MBE) called suboxide MBE (S-MBE) is demonstrated to be capable of growing epitaxial In2O3 at BEOL temperatures with unmatched crystal quality. The fullwidth at halfmaximum of the rocking curve is 0.015° and, thus, ≈5x narrower than any reports at any temperature to date and limited by the substrate quality. The key to achieving these results is the provision of an In2O beam by S-MBE, which enables growth in adsorption control and is kinetically favorable. To benchmark this deposition method for TFTs, rudimentary devices were fabricated.

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Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy

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