@inproceedings{add1af770204464da2d7a29ce53b5f92,
title = "Ga+ Focused Ion Beam Damage in n-type Ga2O3and Its Recovery after Annealing Treatment",
abstract = "Focused Ga+ ion milling of lightly Si-doped, n-type Ga2O3 was performed with 2-30 kV ions at normal incidence and beam currents that were a function of beam voltage. The electrical effects of the ion damage were characterized by Schottky barrier height and diode ideality factor on vertical rectifier structures comprising 10 μm epitaxial n- Ga2O3 on n+ Ga2O3 substrates, while the structural damage was imaged by Transmission Electron Microscopy. The forward current-voltage characteristics showed significant deterioration at 5kV. The I-V characteristics no longer showed rectification for the 30kV condition. Subsequent annealing up to 400°C produced substantial recovery of the I-V characteristics for all beam energies and was sufficient to restore the initial ideality factor completely for beam energies up to 5kV. A remarkable reduction of dislocations can be observed in 30 kV ion exposed sample after annealing at 400°C.",
author = "Xinyi Xia and Nahid Al-Mamun and Warywoba Daudi and Fan Ren and Aman Haque and Pearton, {Stephen J.}",
note = "Publisher Copyright: {\textcopyright} 2022 ECS - The Electrochemical Society.; 242nd ECS Meeting ; Conference date: 09-10-2022 Through 13-10-2022",
year = "2022",
doi = "10.1149/10905.0003ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Institute of Physics",
number = "5",
pages = "3--14",
booktitle = "ECS Transactions",
address = "United Kingdom",
edition = "5",
}