Ga+ Focused Ion Beam Damage in n-type Ga2O3and Its Recovery after Annealing Treatment

Xinyi Xia, Nahid Al-Mamun, Warywoba Daudi, Fan Ren, Aman Haque, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Focused Ga+ ion milling of lightly Si-doped, n-type Ga2O3 was performed with 2-30 kV ions at normal incidence and beam currents that were a function of beam voltage. The electrical effects of the ion damage were characterized by Schottky barrier height and diode ideality factor on vertical rectifier structures comprising 10 μm epitaxial n- Ga2O3 on n+ Ga2O3 substrates, while the structural damage was imaged by Transmission Electron Microscopy. The forward current-voltage characteristics showed significant deterioration at 5kV. The I-V characteristics no longer showed rectification for the 30kV condition. Subsequent annealing up to 400°C produced substantial recovery of the I-V characteristics for all beam energies and was sufficient to restore the initial ideality factor completely for beam energies up to 5kV. A remarkable reduction of dislocations can be observed in 30 kV ion exposed sample after annealing at 400°C.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherInstitute of Physics
Number of pages12
ISBN (Electronic)9781607685395
StatePublished - 2022
Event242nd ECS Meeting - Atlanta, United States
Duration: Oct 9 2022Oct 13 2022

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


Conference242nd ECS Meeting
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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