(Ga,In)P nanowires grown without intentional catalyst

Carolina F. Cerqueira; Bartolomeu C. Viana; Cleanio Da Luz-Lima; Nestor Perea-Lopez; Mauricio Terrones; Eduardo H.L. Falcão; Anderson S.L. Gomes; Remi Chassagnon; André L. Pinto; Luiz C. Sampaio; Marco Sacilotti

doi:10.1016/j.jcrysgro.2015.08.009

(Ga,In)P nanowires grown without intentional catalyst

Carolina F. Cerqueira, Bartolomeu C. Viana, Cleanio Da Luz-Lima, Nestor Perea-Lopez, Mauricio Terrones, Eduardo H.L. Falcão, Anderson S.L. Gomes, Remi Chassagnon, André L. Pinto, Luiz C. Sampaio, Marco Sacilotti

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((_^C2^H53Ga), used as Ga source, is transported by the N₂ gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1_-x^InxP/Ga1_-y^InyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.

Original language	English (US)
Pages (from-to)	72-78
Number of pages	7
Journal	Journal of Crystal Growth
Volume	431
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.08.009
State	Published - Dec 1 2015

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2015.08.009

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@article{1305037a3dc84a6cb2e97157b55e1776,

title = "(Ga,In)P nanowires grown without intentional catalyst",

abstract = "We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H53Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInxP/Ga1-yInyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.",

author = "Cerqueira, {Carolina F.} and Viana, {Bartolomeu C.} and Luz-Lima, {Cleanio Da} and Nestor Perea-Lopez and Mauricio Terrones and Falc{\~a}o, {Eduardo H.L.} and Gomes, {Anderson S.L.} and Remi Chassagnon and Pinto, {Andr{\'e} L.} and Sampaio, {Luiz C.} and Marco Sacilotti",

year = "2015",

month = dec,

day = "1",

doi = "10.1016/j.jcrysgro.2015.08.009",

language = "English (US)",

volume = "431",

pages = "72--78",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - (Ga,In)P nanowires grown without intentional catalyst

AU - Cerqueira, Carolina F.

AU - Viana, Bartolomeu C.

AU - Luz-Lima, Cleanio Da

AU - Perea-Lopez, Nestor

AU - Terrones, Mauricio

AU - Falcão, Eduardo H.L.

AU - Gomes, Anderson S.L.

AU - Chassagnon, Remi

AU - Pinto, André L.

AU - Sampaio, Luiz C.

AU - Sacilotti, Marco

PY - 2015/12/1

Y1 - 2015/12/1

N2 - We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H53Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInxP/Ga1-yInyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.

AB - We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H53Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInxP/Ga1-yInyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.

UR - http://www.scopus.com/inward/record.url?scp=84942417917&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942417917&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.08.009

DO - 10.1016/j.jcrysgro.2015.08.009

M3 - Article

AN - SCOPUS:84942417917

SN - 0022-0248

VL - 431

SP - 72

EP - 78

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

(Ga,In)P nanowires grown without intentional catalyst

Abstract

All Science Journal Classification (ASJC) codes

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