TY - JOUR
T1 - Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation
AU - Wang, Y. G.
AU - Ashok, S.
N1 - Funding Information:
This work was supported under the aegis of the Penn State Center for Particle Beam Interactions with Solids, funded by IBM.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1989/3/2
Y1 - 1989/3/2
N2 - An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 1012 cm-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.
AB - An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 1012 cm-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.
UR - http://www.scopus.com/inward/record.url?scp=0024622180&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024622180&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(89)90826-4
DO - 10.1016/0168-583X(89)90826-4
M3 - Article
AN - SCOPUS:0024622180
SN - 0168-583X
VL - 39
SP - 461
EP - 465
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 1-4
ER -