Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation

Y. G. Wang; S. Ashok

doi:10.1016/0168-583X(89)90826-4

Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation

Y. G. Wang, S. Ashok

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2 Scopus citations

Abstract

An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 10¹² cm^-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.

Original language	English (US)
Pages (from-to)	461-465
Number of pages	5
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	39
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(89)90826-4
State	Published - Mar 2 1989

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/0168-583X(89)90826-4

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title = "Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation",

abstract = "An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 1012 cm-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.",

author = "Wang, {Y. G.} and S. Ashok",

note = "Funding Information: This work was supported under the aegis of the Penn State Center for Particle Beam Interactions with Solids, funded by IBM. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1989",

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doi = "10.1016/0168-583X(89)90826-4",

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T1 - Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation

AU - Wang, Y. G.

AU - Ashok, S.

N1 - Funding Information: This work was supported under the aegis of the Penn State Center for Particle Beam Interactions with Solids, funded by IBM. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1989/3/2

Y1 - 1989/3/2

N2 - An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 1012 cm-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.

AB - An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 1012 cm-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.

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JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation

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