Gallium-related defect centers in molecular-beam-epitaxy-grown ZnSe films: Influence of electric field on thermal emission of electrons

Keyphrases

• Molecular Beam Epitaxy 100%
• Gallium 100%
• Defect Centers 100%
• Thermal Emission 100%
• ZnSe Films 100%
• Influence of Electric Field 100%
• Poole-Frenkel Effect 100%
• Zinc Selenide 50%
• Deep Level Transient Spectroscopy 50%
• Gallium Arsenide 25%
• Electric Field (E-field) 25%
• Energy Data 25%
• Activation Energy 25%
• Thermal Energy 25%
• Energy Barrier 25%
• Electron Traps 25%
• Thermally Activated Processes 25%
• Defect Model 25%
• Carrier Concentration 25%
• Deep Level Defects 25%
• Defect Complexes 25%
• Concentration Dependence 25%
• Persistent Photoconductivity 25%
• Next-nearest Neighbor 25%
• Thermal Barrier 25%
• Carrier Capture 25%
• Zinc Vacancy 25%
• Model Attributes 25%
• Capture Process 25%
• Ga Doping 25%
• Activation Energies of Traps 25%

Engineering

• Electric Field 100%
• Transients 100%
• Defects 100%
• Deep Level 100%
• Activation Energy 100%
• Related Defect 100%
• Gallium Arsenide 50%
• Electron Trap 50%
• Energy Barrier 50%
• Nearest Neighbor 50%
• Thermal Energy 50%
• Thermal Barrier 50%
• Carrier Concentration 50%

Material Science

• Film 100%
• Molecular Beam Epitaxy 100%
• Gallium 100%
• Deep-Level Transient Spectroscopy 66%
• Activation Energy 66%
• Gallium Arsenide 33%
• Carrier Concentration 33%
• Photoconductivity 33%