Abstract
Guarded Al- and Au-nGaAs Schottky barrier diodes were subjected to Co60-ray irradiation and their electrical characteristics evaluated. These GaAs Schottkys did not exhibit significant change in their I-V and C-V characteristics up to an absorbed dose as high as 1.5 x 107 rads. Diodes that were previously neutron-irradiated with consequent degradation were also subjected to Co60 irradiation, but no synergistic changes were observed.
Original language | English (US) |
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Pages (from-to) | 999-1000 |
Number of pages | 2 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 25 |
Issue number | 2 |
DOIs | |
State | Published - Apr 1978 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering