Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions

Keyphrases

• Irradiation 100%
• Prestress 100%
• GaN HEMT 100%
• Gamma Irradiation 100%
• On-state 80%
• Leakage Current 60%
• Order of Magnitude 40%
• Off-state 40%
• In Situ 20%
• Device Characteristics 20%
• Device Performance 20%
• Strain Distribution 20%
• High Dose 20%
• High Electric Field 20%
• Transient Effect 20%
• Electronic Devices 20%
• Radiation Damage 20%
• Material System 20%
• Threshold Voltage 20%
• Radiation Hardness 20%
• Total Dose 20%
• Diffusion Process 20%
• Threshold Voltage Shift 20%
• Maximum Transconductance 20%
• Design System 20%
• AlGaN/GaN High Electron Mobility Transistor 20%
• Saturation Current 20%
• High Threshold Voltage 20%
• DC Biasing 20%

Engineering

• Nitride 100%
• Gamma Radiation 100%
• Transistor 100%
• Device Performance 50%
• Material System 50%
• Design System 50%
• Prestress 50%
• High Electric Field 50%
• Radiation Effect 50%
• Diffusion Process 50%
• State Operation 50%
• Defect Density 50%
• State Device 50%
• Collectors 50%

Material Science

• Transistor 100%
• Gallium Nitride 100%
• Electron Mobility 100%
• Radiation Damage 50%
• Defect Density 50%