Gamma-ray irradiation of ZnO thin film transistors and circuits

Dalong Zhao; Devin A. Mourey; Thomas Nelson Jackson

doi:10.1109/DRC.2010.5551979

Gamma-ray irradiation of ZnO thin film transistors and circuits

Dalong Zhao, Devin A. Mourey, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose < 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy ⁶⁰Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200°C) anneal.

Original language	English (US)
Title of host publication	68th Device Research Conference, DRC 2010
Pages	241-242
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2010.5551979
State	Published - Oct 11 2010
Event	68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States Duration: Jun 21 2010 → Jun 23 2010

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	68th Device Research Conference, DRC 2010
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/10 → 6/23/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2010.5551979

Cite this

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title = "Gamma-ray irradiation of ZnO thin film transistors and circuits",

abstract = "The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose < 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy 60Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200°C) anneal.",

author = "Dalong Zhao and Mourey, {Devin A.} and Jackson, {Thomas Nelson}",

year = "2010",

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doi = "10.1109/DRC.2010.5551979",

language = "English (US)",

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series = "Device Research Conference - Conference Digest, DRC",

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AU - Zhao, Dalong

AU - Mourey, Devin A.

AU - Jackson, Thomas Nelson

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N2 - The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose < 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy 60Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200°C) anneal.

AB - The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose < 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy 60Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200°C) anneal.

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Gamma-ray irradiation of ZnO thin film transistors and circuits

Abstract

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