Abstract
The first demonstration of radio-frequency Planar Inter-Digitated Metal-Insulator-Semiconductor (PIDMIS) Varactors fabricated on AlGaN/GaN heterostructures is reported. The PIDMIS varactors achieved good quality factor (Q-factor) and tuning range. The Q-factor of PIDMIS varactors is discussed based on a physical equivalent circuit, which takes into account the capacitance of the active channel, fixed insulator capacitance, parasitic resistances and leakage current through substrate. The experimental data shows that for identical substrate structure, the quality factor varies with different design parameters.
Original language | English (US) |
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Pages | 2257-2260 |
Number of pages | 4 |
State | Published - 2004 |
Event | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004 |
Other
Other | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
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Country/Territory | China |
City | Beijing |
Period | 10/18/04 → 10/21/04 |
All Science Journal Classification (ASJC) codes
- General Engineering