GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction

Keyphrases

• Atomic Force Microscopy 100%
• High-resolution X-ray Diffraction (HRXRD) 100%
• GaN Films 100%
• Near-field Scanning Optical Microscopy 100%
• Near-field Scanning Optical Microscope 66%
• Microscope Measurement 33%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 33%
• Photoluminescence Measurements 33%
• Sapphire Substrate 33%
• Band Edge 33%
• Spatial Scanning 33%
• Time-resolved Photoluminescence 33%
• Submicron Scale 33%
• Yellow Luminescence 33%

Engineering

• High Resolution 100%
• Ray Diffraction 100%
• Atomic Force Microscopy 100%
• Optical Microscope 100%
• Spatial Resolution 50%
• Spatial Variation 50%
• Band Edge 50%
• Sapphire Substrate 50%

Physics

• Photoluminescence 100%
• Atomic Force Microscopy 100%
• High Resolution X-Ray Diffraction 100%
• Metalorganic Vapor Phase Epitaxy 50%