@inproceedings{00399ee7ed5a4fdeb193e8947d77a77d,
title = "GaN Super-Heterojunction Schottky Barrier Diode with over 10 kV Blocking Voltage",
abstract = "In this paper, we present GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with over 10 kV blocking voltage. Charge imbalance between the n-type delta doping and the p-type doping was adjusted by N+ implantation. This device structure enabled scaling of breakdown voltage to over 10 kV and with an on-resistance of 1054 \Omega \cdot\text{mm.",
author = "Han, {Sang Woo} and Jianan Song and Rongming Chu",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9420906",
language = "English (US)",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "United States",
}