TY - JOUR
T1 - Gapping by squashing
T2 - Metal-insulator and insulator-metal transitions in collapsed carbon nanotubes
AU - Lammert, Paul E.
AU - Zhang, Peihong
AU - Crespi, Vincent H.
PY - 2000
Y1 - 2000
N2 - Squashing brings circumferentially separated areas of a carbon nanotube into close proximity, drastically altering the low-energy electronic properties and (in some cases) reversing standard rules for metallic versus semiconducting behavior. Such a deformation mode, not requiring motion of tube ends, may be useful for devices. Uniaxial stress of a few kbar can reversibly collapse a small-radius tube, inducing a 0.1 eV gap with a very strong pressure dependence, while the collapsed state of a larger tube is stable. The low-energy electronic properties of chiral tubes are surprisingly insensitive to collapse.
AB - Squashing brings circumferentially separated areas of a carbon nanotube into close proximity, drastically altering the low-energy electronic properties and (in some cases) reversing standard rules for metallic versus semiconducting behavior. Such a deformation mode, not requiring motion of tube ends, may be useful for devices. Uniaxial stress of a few kbar can reversibly collapse a small-radius tube, inducing a 0.1 eV gap with a very strong pressure dependence, while the collapsed state of a larger tube is stable. The low-energy electronic properties of chiral tubes are surprisingly insensitive to collapse.
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U2 - 10.1103/PhysRevLett.84.2453
DO - 10.1103/PhysRevLett.84.2453
M3 - Article
AN - SCOPUS:0000954598
SN - 0031-9007
VL - 84
SP - 2453
EP - 2456
JO - Physical review letters
JF - Physical review letters
IS - 11
ER -