Gate controlled negative differential resistance and photoconductivity enhancement in carbon nanotube addressable intra-connects

Seon Woo Lee; Slava Rotkin; Andrei Sirenko; Daniel Lopez; Avi Kornblit; Haim Grebel

Gate controlled negative differential resistance and photoconductivity enhancement in carbon nanotube addressable intra-connects

Seon Woo Lee, Slava Rotkin, Andrei Sirenko, Daniel Lopez, Avi Kornblit, Haim Grebel

Research output: Contribution to journal › Conference article › peer-review

Abstract

Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well.

Original language	English (US)
Pages (from-to)	173-177
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	1142
State	Published - 2009
Event	2008 MRS Fall Meeting - Boston, MA, United States Duration: Dec 1 2008 → Dec 5 2008

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Gate controlled negative differential resistance and photoconductivity enhancement in carbon nanotube addressable intra-connects",

abstract = "Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well.",

author = "Lee, {Seon Woo} and Slava Rotkin and Andrei Sirenko and Daniel Lopez and Avi Kornblit and Haim Grebel",

year = "2009",

language = "English (US)",

volume = "1142",

pages = "173--177",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2008 MRS Fall Meeting ; Conference date: 01-12-2008 Through 05-12-2008",

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TY - JOUR

T1 - Gate controlled negative differential resistance and photoconductivity enhancement in carbon nanotube addressable intra-connects

AU - Lee, Seon Woo

AU - Rotkin, Slava

AU - Sirenko, Andrei

AU - Lopez, Daniel

AU - Kornblit, Avi

AU - Grebel, Haim

PY - 2009

Y1 - 2009

N2 - Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well.

AB - Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well.

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UR - http://www.scopus.com/inward/citedby.url?scp=70449598232&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:70449598232

SN - 0272-9172

VL - 1142

SP - 173

EP - 177

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - 2008 MRS Fall Meeting

Y2 - 1 December 2008 through 5 December 2008

ER -

Gate controlled negative differential resistance and photoconductivity enhancement in carbon nanotube addressable intra-connects

Abstract

All Science Journal Classification (ASJC) codes

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