Abstract
Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 173-177 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1142 |
| State | Published - 2009 |
| Event | 2008 MRS Fall Meeting - Boston, MA, United States Duration: Dec 1 2008 → Dec 5 2008 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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