Gate dielectric monitoring using non-contact electrical characterization

Jerzy Ruzyllo, P. Roman, D. O. Lee, M. Brubaker, E. Kamieniecki

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Reduction of gate oxide thicknesses to the tunnelable range as well as the anticipated introduction of alternative gate dielectric materials create new challenges regarding monitoring of gate insulation processes. In this paper methodologies applied in gate oxide characterization are considered and advantages of non-contact methods are emphasized. More specifically, the Surface Charge Profiling (SCP) method, which is particularly well suited for this application is discussed. This method allows measurement of the charge density without any bias on the oxide, and hence, without any current flow across the oxide. Therefore, measurements of surface/oxide charge density as well surface recombination lifetime can be carried on oxides in which charge measurement using other methods would be prevented due to significant current. This capability of the SCP method is demonstrated using experimental results.

Original languageEnglish (US)
Pages (from-to)198-206
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Dec 1 1999
EventProceedings of the 1999 In-Line Methods and Monitors for Process and Yield Improvement - Santa Clara, CA, USA
Duration: Sep 22 1999Sep 23 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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