Keyphrases
AlGaN Layer
100%
AlGaN-GaN
100%
Aluminum Gallium Nitride (AlGaN)
25%
Barrier Model
25%
Chemical Vapor Deposition Growth
100%
Current-voltage Characteristics
25%
Donor Density
25%
Drain Current
25%
Forward Current
25%
GaN HEMT
100%
Gate Leakage
100%
Growth Window
25%
High Electron Mobility Transistor
25%
Large Surfaces
25%
Layer Growth
25%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Reverse Current
25%
Sapphire Substrate
25%
Surface Barrier
25%
Surface Donors
25%
Two-dimensional Electron Gas Mobility
25%
V(III)
50%
Material Science
Current Voltage Characteristics
33%
Density
33%
Electron Mobility
100%
Metal-Organic Chemical Vapor Deposition
100%
Sapphire
33%
Transistor
100%
Engineering
Current-Voltage Characteristic
50%
Metal Organic Chemical Vapor Deposition
100%
Sapphire Substrate
50%
Two Dimensional
50%
Earth and Planetary Sciences
Electron Gas
33%
High Electron Mobility Transistors
100%
Metalorganic Chemical Vapor Deposition
100%