Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

S. A. Suliman; O. O. Awadelkarim; R. S. Ridley; G. M. Dolny

doi:10.1016/j.mee.2003.12.045

Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

S. A. Suliman
, O. O. Awadelkarim
, R. S. Ridley
, G. M. Dolny

Engineering Science and Mechanics

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

We report on the SiO₂/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼10¹¹ eV^-1 cm^-2, and using deep level transient spectroscopy the P_b center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO₂/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.

Original language	English (US)
Pages (from-to)	247-252
Number of pages	6
Journal	Microelectronic Engineering
Volume	72
Issue number	1-4
DOIs	https://doi.org/10.1016/j.mee.2003.12.045
State	Published - Apr 2004
Event	Proceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain Duration: Jun 18 2003 → Jun 20 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2003.12.045

Cite this

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title = "Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices",

abstract = "We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.",

author = "Suliman, \{S. A.\} and Awadelkarim, \{O. O.\} and Ridley, \{R. S.\} and Dolny, \{G. M.\}",

year = "2004",

month = apr,

doi = "10.1016/j.mee.2003.12.045",

language = "English (US)",

volume = "72",

pages = "247--252",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the 13th Biennial Conference on Insulating Film ; Conference date: 18-06-2003 Through 20-06-2003",

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Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices. / Suliman, S. A.; Awadelkarim, O. O.; Ridley, R. S. et al.
In: Microelectronic Engineering, Vol. 72, No. 1-4, 04.2004, p. 247-252.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Gate-oxide grown on the sidewalls and base of a U-shaped Si trench

T2 - Proceedings of the 13th Biennial Conference on Insulating Film

AU - Suliman, S. A.

AU - Awadelkarim, O. O.

AU - Ridley, R. S.

AU - Dolny, G. M.

PY - 2004/4

Y1 - 2004/4

N2 - We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.

AB - We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.

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AN - SCOPUS:1642603294

SN - 0167-9317

VL - 72

SP - 247

EP - 252

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

Y2 - 18 June 2003 through 20 June 2003

ER -

Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

Abstract

All Science Journal Classification (ASJC) codes

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