Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

Engineering

• Deep Level 33%
• Defects 33%
• Gate Oxide 100%
• High Electric Field 33%
• Induced Degradation 33%
• Interface Condition 100%
• Interface State 33%
• Si Interface 100%
• Side Wall 100%
• Silicon Device 100%
• Silicon Oxide 66%
• Stress Field 33%
• Transients 33%

Keyphrases

• Charge Pump 33%
• Electric Field Stress 33%
• Electrical Stress 33%
• Interface Conditions 100%
• Perceptual Centers 33%
• Si Trench 100%
• Silicon Devices 100%
• Trench Effect 100%
• Weakest Region 33%

Material Science

• Deep-Level Transient Spectroscopy 33%
• Density 33%
• Metal Oxide 100%
• Oxide Compound 100%
• Silicon 66%
• Silicon Device 100%
• Stress Field 33%
• Transistor 33%