Gate recessing of GaN MESFETs using photoelectrochemical wet etching

A. T. Ping; D. Selvanathan; C. Youtsey; E. Piner; J. Redwing; I. Adesida

doi:10.1049/el:19991341

Gate recessing of GaN MESFETs using photoelectrochemical wet etching

A. T. Ping
, D. Selvanathan
, C. Youtsey
, E. Piner
, J. Redwing
, I. Adesida

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.

Original language	English (US)
Pages (from-to)	2140-2141
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	24
DOIs	https://doi.org/10.1049/el:19991341
State	Published - Nov 25 1999

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19991341

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@article{3a3fb5bbb02d4c83b77231d1d6115d61,

title = "Gate recessing of GaN MESFETs using photoelectrochemical wet etching",

abstract = "For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.",

author = "Ping, \{A. T.\} and D. Selvanathan and C. Youtsey and E. Piner and J. Redwing and I. Adesida",

year = "1999",

month = nov,

day = "25",

doi = "10.1049/el:19991341",

language = "English (US)",

volume = "35",

pages = "2140--2141",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "24",

}

TY - JOUR

T1 - Gate recessing of GaN MESFETs using photoelectrochemical wet etching

AU - Ping, A. T.

AU - Selvanathan, D.

AU - Youtsey, C.

AU - Piner, E.

AU - Redwing, J.

AU - Adesida, I.

PY - 1999/11/25

Y1 - 1999/11/25

N2 - For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.

AB - For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.

UR - https://www.scopus.com/pages/publications/0033221780

UR - https://www.scopus.com/pages/publications/0033221780#tab=citedBy

U2 - 10.1049/el:19991341

DO - 10.1049/el:19991341

M3 - Article

AN - SCOPUS:0033221780

SN - 0013-5194

VL - 35

SP - 2140

EP - 2141

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Gate recessing of GaN MESFETs using photoelectrochemical wet etching

Abstract

All Science Journal Classification (ASJC) codes

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