Gate-Self-Aligned P-Channel Germanium Misfet's

Thomas N. Jackson, C. M. Ransom, J. F. Degelormo

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


We have fabricated the first gate-self-aligned germanium MISFET's and have obtained record transconductance for germanium FET's. The devices fabricated are p-channel, inversion-mode, germanium MISFET's. A germanium-oxynitride gate dielectric is used and aluminum gates serve as the mask for self-aligned source and drain implants. A maximum room-temperature transconductance of 104 mS/mm was measured for a 0.6-μm gate length. A hole inversion channel mobility of 640 cm2/Vs was calculated using transconductance and capacitance data from long-channel devices. This large hole channel mobility suggests that germanium may be an attractive candidate for CMOS technology.

Original languageEnglish (US)
Pages (from-to)605-607
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - Nov 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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