Gate tunable MoS2-based thermoelectric devices

Morteza Kayyalha; Yong P. Chen

doi:10.1109/DRC.2014.6872317

Gate tunable MoS₂-based thermoelectric devices

Morteza Kayyalha, Yong P. Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Two dimensional semiconductors and especially MoS₂ have gained a lot of attention due to their unique properties. Finite bandgap, large I _on/I_off ratio, good mobility, and nearly perfect subthreshold slope are among some of the features that make these materials attractive to researchers. While electrical transport has been studied extensively on single and multilayers of these Transition Metal Dichalcogenides (TMDs) [1,2], to the best of our knowledge, there has been no experimental study on their thermoelectric properties. Recently, it has been predicted that few layers of TMDs can provide extremely large power factor (S²σ) and thus large ZT making them promising candidates as the future thermoelectric devices [3]. Here, for the first time, we explore gate-dependent thermoelectric properties of multilayer MoS₂. As one of the important figures of merit for thermoelectric devices, we also calculate power factor which can then be used to find ZT.

Original language	English (US)
Title of host publication	72nd Device Research Conference, DRC 2014 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	101-102
Number of pages	2
ISBN (Print)	9781479954056
DOIs	https://doi.org/10.1109/DRC.2014.6872317
State	Published - 2014
Event	72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States Duration: Jun 22 2014 → Jun 25 2014

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	72nd Device Research Conference, DRC 2014
Country/Territory	United States
City	Santa Barbara, CA
Period	6/22/14 → 6/25/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2014.6872317

Cite this

@inproceedings{b177ddd9769042498186b79f0d192719,

title = "Gate tunable MoS2-based thermoelectric devices",

abstract = "Two dimensional semiconductors and especially MoS2 have gained a lot of attention due to their unique properties. Finite bandgap, large I on/Ioff ratio, good mobility, and nearly perfect subthreshold slope are among some of the features that make these materials attractive to researchers. While electrical transport has been studied extensively on single and multilayers of these Transition Metal Dichalcogenides (TMDs) [1,2], to the best of our knowledge, there has been no experimental study on their thermoelectric properties. Recently, it has been predicted that few layers of TMDs can provide extremely large power factor (S2σ) and thus large ZT making them promising candidates as the future thermoelectric devices [3]. Here, for the first time, we explore gate-dependent thermoelectric properties of multilayer MoS2. As one of the important figures of merit for thermoelectric devices, we also calculate power factor which can then be used to find ZT.",

author = "Morteza Kayyalha and Chen, {Yong P.}",

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Kayyalha, M & Chen, YP 2014, Gate tunable MoS₂-based thermoelectric devices. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872317, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 101-102, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872317

Gate tunable MoS₂-based thermoelectric devices. / Kayyalha, Morteza; Chen, Yong P.
72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 101-102 6872317 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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