Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2

Xiaoxiang Xi, Helmuth Berger, László Forró, Jie Shan, Kin Fai Mak

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Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. Here, we demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe2 by an ionic liquid gate. A variation up to ∼50% in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D NbSe2. The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.

Original languageEnglish (US)
Article number106801
JournalPhysical review letters
Issue number10
StatePublished - Aug 29 2016

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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