Ge doped GaN with controllable high carrier concentration for plasmonic applications

Ronny Kirste; Marc P. Hoffmann; Edward Sachet; Milena Bobea; Zachary Bryan; Isaac Bryan; Christian Nenstiel; Axel Hoffmann; Jon Paul Maria; Ramón Collazo; Zlatko Sitar

doi:10.1063/1.4848555

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Ronny Kirste, Marc P. Hoffmann, Edward Sachet, Milena Bobea, Zachary Bryan, Isaac Bryan, Christian Nenstiel, Axel Hoffmann, Jon Paul Maria, Ramón Collazo, Zlatko Sitar

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 10²⁰ cm^-3. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm^-1 and a surface plasma with an energy around 2000 cm^-1. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

Original language	English (US)
Article number	242107
Journal	Applied Physics Letters
Volume	103
Issue number	24
DOIs	https://doi.org/10.1063/1.4848555
State	Published - Dec 9 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4848555

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title = "Ge doped GaN with controllable high carrier concentration for plasmonic applications",

abstract = "Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 1020 cm-3. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm-1 and a surface plasma with an energy around 2000 cm-1. These findings open possibilities for the application of highly doped GaN for plasmonic devices.",

author = "Ronny Kirste and Hoffmann, {Marc P.} and Edward Sachet and Milena Bobea and Zachary Bryan and Isaac Bryan and Christian Nenstiel and Axel Hoffmann and Maria, {Jon Paul} and Ram{\'o}n Collazo and Zlatko Sitar",

note = "Funding Information: The authors thank Dr. Genzer and Dr. Kiril Efimenko from the Department of Chemical Engineering at NCSU for granting generous access to the IR-ellipsometer. Parts of the work were supported by DFG within SFB 787, by NSF under Contract No. DMR-1108071, and by NSF CHE 1112017.",

year = "2013",

month = dec,

day = "9",

doi = "10.1063/1.4848555",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Ge doped GaN with controllable high carrier concentration for plasmonic applications

AU - Kirste, Ronny

AU - Hoffmann, Marc P.

AU - Sachet, Edward

AU - Bobea, Milena

AU - Bryan, Zachary

AU - Bryan, Isaac

AU - Nenstiel, Christian

AU - Hoffmann, Axel

AU - Maria, Jon Paul

AU - Collazo, Ramón

AU - Sitar, Zlatko

N1 - Funding Information: The authors thank Dr. Genzer and Dr. Kiril Efimenko from the Department of Chemical Engineering at NCSU for granting generous access to the IR-ellipsometer. Parts of the work were supported by DFG within SFB 787, by NSF under Contract No. DMR-1108071, and by NSF CHE 1112017.

PY - 2013/12/9

Y1 - 2013/12/9

N2 - Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 1020 cm-3. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm-1 and a surface plasma with an energy around 2000 cm-1. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

AB - Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 1020 cm-3. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm-1 and a surface plasma with an energy around 2000 cm-1. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242107

ER -

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Abstract

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