Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

Gauri Karve; Xiaoguang Zheng; Xiaofeng Zhang; Xiaowei Li; Ning Li; Shuling Wang; Feng Ma; Archie Holmes; Joe C. Campbell; G. S. Kinsey; J. C. Boisvert; T. D. Isshiki; R. Sudharsanan; Donald S. Bethune; William P. Risk

doi:10.1109/JQE.2003.817244

Geiger mode operation of an In_0.53Ga_0.47As-In_0.52Al_0.48As avalanche photodiode

Gauri Karve
, Xiaoguang Zheng
, Xiaofeng Zhang
, Xiaowei Li
, Ning Li
, Shuling Wang
, Feng Ma
, Archie Holmes
, Joe C. Campbell
, G. S. Kinsey
, J. C. Boisvert
, T. D. Isshiki
, R. Sudharsanan
, Donald S. Bethune
, William P. Risk

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In_0.52Al_0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.

Original language	English (US)
Pages (from-to)	1281-1286
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	39
Issue number	10
DOIs	https://doi.org/10.1109/JQE.2003.817244
State	Published - Oct 2003

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2003.817244

Cite this

Karve, G., Zheng, X., Zhang, X., Li, X., Li, N., Wang, S., Ma, F., Holmes, A., Campbell, J. C., Kinsey, G. S., Boisvert, J. C., Isshiki, T. D., Sudharsanan, R., Bethune, D. S., & Risk, W. P. (2003). Geiger mode operation of an In_0.53Ga_0.47As-In_0.52Al_0.48As avalanche photodiode. IEEE Journal of Quantum Electronics, 39(10), 1281-1286. https://doi.org/10.1109/JQE.2003.817244

@article{4d52369b02bd49c09fefaa1a593a14e9,

title = "Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode",

abstract = "Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16\% were achieved at 130 K.",

author = "Gauri Karve and Xiaoguang Zheng and Xiaofeng Zhang and Xiaowei Li and Ning Li and Shuling Wang and Feng Ma and Archie Holmes and Campbell, \{Joe C.\} and Kinsey, \{G. S.\} and Boisvert, \{J. C.\} and Isshiki, \{T. D.\} and R. Sudharsanan and Bethune, \{Donald S.\} and Risk, \{William P.\}",

year = "2003",

month = oct,

doi = "10.1109/JQE.2003.817244",

language = "English (US)",

volume = "39",

pages = "1281--1286",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

TY - JOUR

T1 - Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

AU - Karve, Gauri

AU - Zheng, Xiaoguang

AU - Zhang, Xiaofeng

AU - Li, Xiaowei

AU - Li, Ning

AU - Wang, Shuling

AU - Ma, Feng

AU - Holmes, Archie

AU - Campbell, Joe C.

AU - Kinsey, G. S.

AU - Boisvert, J. C.

AU - Isshiki, T. D.

AU - Sudharsanan, R.

AU - Bethune, Donald S.

AU - Risk, William P.

PY - 2003/10

Y1 - 2003/10

N2 - Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.

AB - Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.

UR - https://www.scopus.com/pages/publications/0141952904

UR - https://www.scopus.com/pages/publications/0141952904#tab=citedBy

U2 - 10.1109/JQE.2003.817244

DO - 10.1109/JQE.2003.817244

M3 - Article

AN - SCOPUS:0141952904

SN - 0018-9197

VL - 39

SP - 1281

EP - 1286

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 10

ER -

Geiger mode operation of an In_0.53Ga_0.47As-In_0.52Al_0.48As avalanche photodiode

Abstract

All Science Journal Classification (ASJC) codes

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