TY - JOUR
T1 - Generating Sub-nanometer Pores in Single-Layer MoS2 by Heavy-Ion Bombardment for Gas Separation
T2 - A Theoretical Perspective
AU - Yin, Kedi
AU - Huang, Shengxi
AU - Chen, Xiaofei
AU - Wang, Xinwei
AU - Kong, Jing
AU - Chen, Yan
AU - Xue, Jianming
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (No. 11605063), Guangdong Innovative and Entrepreneurial Research Team Program (No. 2014ZT05N200), Guangzhou Science and Technology Program General Projects (No. 201707010146), and the Recruitment Program of Global Youth Experts, IAEA (CRP No. F11020 and Contract No. 21063). J.K. acknowledges the support from the NSF Center for Energy Efficient Electronics Science (E3S).
Funding Information:
This work was supported by the National Natural Science Foundation of China (No. 11605063) Guangdong Innovative and Entrepreneurial Research Team Program (No. 2014ZT05N200), Guangzhou Science and Technology Program General Projects (No. 201707010146), and the Recruitment Program of Global Youth Experts IAEA (CRP No. F11020 and Contract No. 21063). J.K. acknowledges the support from the NSF Center for Energy Efficient Electronics Science (E3S).
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/8/29
Y1 - 2018/8/29
N2 - Single-layer molybdenum disulfide (MoS2) filters with nanometer-size pores have attracted great attention recently due to their promising performance for membrane separation. Generating nanopores in MoS2 controllably, however, is still a challenging task, which greatly limits the real application of MoS2 filters. In this work, the pore forming process in single-layer MoS2 by heavy-ion bombardment was investigated in detail using molecular dynamics simulations. We found that pores with sub-nanometer size (0.6-1.2 nm) can be created in the MoS2 sheet by single-ion bombardment, with a probability as high as 0.8 pores per incident ion. The size and shape of the nanopore can be tuned controllably by adjusting bombardment parameters. Furthermore, the performance of the MoS2 filter with these sub-nanometer-size pores for separation of He, Ne, H2, Ar, and Kr gases was evaluated by density functional theory-based first-principles calculations. The MoS2 filter was found to show much higher selectivity for separating H2/He and He/Ne than that reported for graphene and other membranes. Such high selectivity was attributed to the interaction between gases and the charged edge of pores in MoS2. Our results suggest the potential application of ion beam technology in single-layer MoS2 for membrane separation.
AB - Single-layer molybdenum disulfide (MoS2) filters with nanometer-size pores have attracted great attention recently due to their promising performance for membrane separation. Generating nanopores in MoS2 controllably, however, is still a challenging task, which greatly limits the real application of MoS2 filters. In this work, the pore forming process in single-layer MoS2 by heavy-ion bombardment was investigated in detail using molecular dynamics simulations. We found that pores with sub-nanometer size (0.6-1.2 nm) can be created in the MoS2 sheet by single-ion bombardment, with a probability as high as 0.8 pores per incident ion. The size and shape of the nanopore can be tuned controllably by adjusting bombardment parameters. Furthermore, the performance of the MoS2 filter with these sub-nanometer-size pores for separation of He, Ne, H2, Ar, and Kr gases was evaluated by density functional theory-based first-principles calculations. The MoS2 filter was found to show much higher selectivity for separating H2/He and He/Ne than that reported for graphene and other membranes. Such high selectivity was attributed to the interaction between gases and the charged edge of pores in MoS2. Our results suggest the potential application of ion beam technology in single-layer MoS2 for membrane separation.
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U2 - 10.1021/acsami.8b10569
DO - 10.1021/acsami.8b10569
M3 - Article
C2 - 30062872
AN - SCOPUS:85052315361
SN - 1944-8244
VL - 10
SP - 28909
EP - 28917
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 34
ER -