Abstract
Semi-insulating SiC crystals were grown by sublimation Physical Vapor Transport technique and semi-insulating 6H-SiC substrate wafers up to 2 inches in diameter were fabricated. Resistivity measurement and high temperature Hall measurement results showed that a large segment of a SiC boule grown in this process was semi-insulating. To evaluate these SI SiC substrates, GaN thin films and device structures were grown on the semi-insulating SiC substrates and device characterization results are presented.
| Original language | English (US) |
|---|---|
| Pages (from-to) | I/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| State | Published - 2000 |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering