@inproceedings{3122b89209a94bc1bf973a0e8f5d6b49,
title = "Generation of deep levels in silicon under post-hydrogen-plasma thermal anneal",
abstract = "Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450 °C and above. These appear to be related to thermal donors, with their formation rate greatly enhanced by the pre-anneal atomic hydrogenation. The concentrations of these levels drop substantially after the 750 °C anneal.",
author = "Nam, {C. W.} and S Ashok",
year = "1994",
month = jan,
day = "1",
language = "English (US)",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "407--410",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
note = "24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",
}