Generation of paramagnetic point defects in silicon dioxide films on silicon through electron injection and exposure to ionizing radiation

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	235-250
Number of pages	16
Journal	Zeitschrift fur Physikalische Chemie
Volume	151
Issue number	PART_1_2
DOIs	https://doi.org/10.1524/zpch.1987.151.Part_1_2.235
State	Published - Jan 1 1987

All Science Journal Classification (ASJC) codes

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title = "Generation of paramagnetic point defects in silicon dioxide films on silicon through electron injection and exposure to ionizing radiation",

author = "Lenahan, {P. M.} and Warren, {W. L.}",

year = "1987",

month = jan,

day = "1",

doi = "10.1524/zpch.1987.151.Part_1_2.235",

language = "English (US)",

volume = "151",

pages = "235--250",

journal = "Zeitschrift fur Physikalische Chemie",

issn = "0942-9352",

publisher = "Oldenbourg Wissenschaftsverlag GmbH",

number = "PART_1_2",

}

TY - JOUR

T1 - Generation of paramagnetic point defects in silicon dioxide films on silicon through electron injection and exposure to ionizing radiation

AU - Lenahan, P. M.

AU - Warren, W. L.

PY - 1987/1/1

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DO - 10.1524/zpch.1987.151.Part_1_2.235

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SN - 0942-9352

VL - 151

SP - 235

EP - 250

JO - Zeitschrift fur Physikalische Chemie

JF - Zeitschrift fur Physikalische Chemie

IS - PART_1_2

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