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Generation of paramagnetic point defects in silicon dioxide films on silicon through electron injection and exposure to ionizing radiation

Research output: Contribution to journalArticlepeer-review

Original languageEnglish (US)
Pages (from-to)235-250
Number of pages16
JournalZeitschrift fur Physikalische Chemie
Volume151
Issue numberPART_1_2
DOIs
StatePublished - 1987

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry

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