GHz devices from epitaxial graphene on SiC

D. K. Gaskill; J. Moon; J. L. Tedesco; J. A. Robinson; A. L. Friedman; P. M. Campbell; G. G. Jernigan; J. Hite; R. L. Myers-Ward; C. R. Eddy; M. A. Fanton

doi:10.1109/ISDRS.2009.5378169

GHz devices from epitaxial graphene on SiC

D. K. Gaskill, J. Moon, J. L. Tedesco, J. A. Robinson, A. L. Friedman, P. M. Campbell, G. G. Jernigan, J. Hite, R. L. Myers-Ward, C. R. Eddy, M. A. Fanton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378169
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ISDRS.2009.5378169

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Gaskill, D. K., Moon, J., Tedesco, J. L., Robinson, J. A., Friedman, A. L., Campbell, P. M., Jernigan, G. G., Hite, J., Myers-Ward, R. L., Eddy, C. R., & Fanton, M. A. (2009). GHz devices from epitaxial graphene on SiC. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378169 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378169

@inproceedings{808249a2533e4d65b6713d1502bfe0ec,

title = "GHz devices from epitaxial graphene on SiC",

author = "Gaskill, {D. K.} and J. Moon and Tedesco, {J. L.} and Robinson, {J. A.} and Friedman, {A. L.} and Campbell, {P. M.} and Jernigan, {G. G.} and J. Hite and Myers-Ward, {R. L.} and Eddy, {C. R.} and Fanton, {M. A.}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378169",

language = "English (US)",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Gaskill, DK, Moon, J, Tedesco, JL, Robinson, JA, Friedman, AL, Campbell, PM, Jernigan, GG, Hite, J, Myers-Ward, RL, Eddy, CR & Fanton, MA 2009, GHz devices from epitaxial graphene on SiC. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378169, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378169

TY - GEN

T1 - GHz devices from epitaxial graphene on SiC

AU - Gaskill, D. K.

AU - Moon, J.

AU - Tedesco, J. L.

AU - Robinson, J. A.

AU - Friedman, A. L.

AU - Campbell, P. M.

AU - Jernigan, G. G.

AU - Hite, J.

AU - Myers-Ward, R. L.

AU - Eddy, C. R.

AU - Fanton, M. A.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=77949360571&partnerID=8YFLogxK

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U2 - 10.1109/ISDRS.2009.5378169

DO - 10.1109/ISDRS.2009.5378169

M3 - Conference contribution

AN - SCOPUS:77949360571

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

GHz devices from epitaxial graphene on SiC

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Other

All Science Journal Classification (ASJC) codes

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