Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Thomas Aichinger; Patrick M. Lenahan

doi:10.1063/1.4747495

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Thomas Aichinger, Patrick M. Lenahan

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39 Scopus citations

Abstract

We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.

Original language	English (US)
Article number	083504
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4747495
State	Published - Aug 20 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4747495

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title = "Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect",

abstract = "We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.",

author = "Thomas Aichinger and Lenahan, {Patrick M.}",

note = "Funding Information: The authors wish to thank Tibor Grasser from the Technical University of Vienna for fruitful discussions and theoretical backup. The authors also wish to thank Corey Cochrane for assistance with the SDR measurements. The work at Penn State was supported in part by Infineon Technologies Austria. The work at Penn State was also supported though General Electric Cooperation by the U.S. Department of Commerce under Award No. NIST 60NANB10D109 and the U.S. Army Research Laboratory. Any opinions, findings, conclusions, or other recommendations expressed herein are those of the authors and do not necessarily reflect the views of the U.S. Commerce Department or the U.S. Army Research Laboratory.",

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doi = "10.1063/1.4747495",

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T1 - Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

AU - Aichinger, Thomas

AU - Lenahan, Patrick M.

N1 - Funding Information: The authors wish to thank Tibor Grasser from the Technical University of Vienna for fruitful discussions and theoretical backup. The authors also wish to thank Corey Cochrane for assistance with the SDR measurements. The work at Penn State was supported in part by Infineon Technologies Austria. The work at Penn State was also supported though General Electric Cooperation by the U.S. Department of Commerce under Award No. NIST 60NANB10D109 and the U.S. Army Research Laboratory. Any opinions, findings, conclusions, or other recommendations expressed herein are those of the authors and do not necessarily reflect the views of the U.S. Commerce Department or the U.S. Army Research Laboratory.

PY - 2012/8/20

Y1 - 2012/8/20

N2 - We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.

AB - We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.

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JF - Applied Physics Letters

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M1 - 083504

ER -

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

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