Giant dielectric constant in the one-dimensional semiconductor Meφ3As (TCNQ)2

Patrick M. Lenahan; T. J. Rowland

doi:10.1016/0038-1098(81)91018-8

Giant dielectric constant in the one-dimensional semiconductor Meφ₃As (TCNQ)₂

Patrick M. Lenahan
, T. J. Rowland

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have measured a large highly anisotropic dielectric constant in methyltriphenylarsonium ditetracyanoquinodimethanide as a function of frequency and temperature. We present a model based upon finite barriers in the conducting strands. Magnetic resonance and electrical conductivity are used in testing the model; good agreement is obtained.

Original language	English (US)
Pages (from-to)	223-227
Number of pages	5
Journal	Solid State Communications
Volume	37
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(81)91018-8
State	Published - Jan 1981

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(81)91018-8

Cite this

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title = "Giant dielectric constant in the one-dimensional semiconductor Meφ3As (TCNQ)2",

abstract = "We have measured a large highly anisotropic dielectric constant in methyltriphenylarsonium ditetracyanoquinodimethanide as a function of frequency and temperature. We present a model based upon finite barriers in the conducting strands. Magnetic resonance and electrical conductivity are used in testing the model; good agreement is obtained.",

author = "Lenahan, \{Patrick M.\} and Rowland, \{T. J.\}",

note = "Funding Information: Acknowledgement — This work was supported by the U. S. Department of Energy under",

year = "1981",

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doi = "10.1016/0038-1098(81)91018-8",

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pages = "223--227",

journal = "Solid State Communications",

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T1 - Giant dielectric constant in the one-dimensional semiconductor Meφ3As (TCNQ)2

AU - Lenahan, Patrick M.

AU - Rowland, T. J.

N1 - Funding Information: Acknowledgement — This work was supported by the U. S. Department of Energy under

PY - 1981/1

Y1 - 1981/1

N2 - We have measured a large highly anisotropic dielectric constant in methyltriphenylarsonium ditetracyanoquinodimethanide as a function of frequency and temperature. We present a model based upon finite barriers in the conducting strands. Magnetic resonance and electrical conductivity are used in testing the model; good agreement is obtained.

AB - We have measured a large highly anisotropic dielectric constant in methyltriphenylarsonium ditetracyanoquinodimethanide as a function of frequency and temperature. We present a model based upon finite barriers in the conducting strands. Magnetic resonance and electrical conductivity are used in testing the model; good agreement is obtained.

UR - https://www.scopus.com/pages/publications/0019437261

UR - https://www.scopus.com/pages/publications/0019437261#tab=citedBy

U2 - 10.1016/0038-1098(81)91018-8

DO - 10.1016/0038-1098(81)91018-8

M3 - Article

AN - SCOPUS:0019437261

SN - 0038-1098

VL - 37

SP - 223

EP - 227

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Giant dielectric constant in the one-dimensional semiconductor Meφ₃As (TCNQ)₂

Abstract

All Science Journal Classification (ASJC) codes

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