TY - GEN
T1 - Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti 0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors
AU - Li, Feng
AU - Fang, Zhao
AU - Misra, Rajiv
AU - Tadigadapa, Srinivas A.
AU - Zhang, Qiming
AU - Datta, Suman
PY - 2011
Y1 - 2011
N2 - Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr2O3, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe 85B5Si10 (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr0.52Ti0.48)O 3 (PZT)-Fe85B5Si10 ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.
AB - Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr2O3, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe 85B5Si10 (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr0.52Ti0.48)O 3 (PZT)-Fe85B5Si10 ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.
UR - http://www.scopus.com/inward/record.url?scp=84880757516&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880757516&partnerID=8YFLogxK
U2 - 10.1109/DRC.2011.5994416
DO - 10.1109/DRC.2011.5994416
M3 - Conference contribution
AN - SCOPUS:84880757516
SN - 9781612842417
T3 - Device Research Conference - Conference Digest, DRC
SP - 69
EP - 70
BT - 69th Device Research Conference, DRC 2011 - Conference Digest
T2 - 69th Device Research Conference, DRC 2011
Y2 - 20 June 2011 through 22 June 2011
ER -