Abstract
The application of a small magnetic field (Formula presented) either parallel or perpendicular to a low-density (Formula presented) magnetic two-dimensional electron gas (2DEG) creates a striking positive magnetoresistance of up to 700%. This is a spin effect, caused by the suppression of spin-dependent hopping paths between localized states with on-site correlation. At higher fields, a spin-related delocalization is observed. In the perpendicular field geometry, orbital effects combine with this delocalization and lead to quantum phase transitions between the spin-polarized insulating state and the (Formula presented) quantum Hall liquid.
| Original language | English (US) |
|---|---|
| Pages (from-to) | R4238-R4241 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1998 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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