TY - JOUR
T1 - Giant Non-Resonant Infrared Second Order Nonlinearity in γ -NaAsSe2
AU - He, Jingyang
AU - Iyer, Abishek K.
AU - Waters, Michael J.
AU - Sarkar, Sumanta
AU - Zu, Rui
AU - Rondinelli, James M.
AU - Kanatzidis, Mercouri G.
AU - Gopalan, Venkatraman
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2022/1/18
Y1 - 2022/1/18
N2 - Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down-conversion. Such crystals need to have high non-resonant NLO coefficients, a large bandgap, low absorption coefficient, and phase-matchability among other competing demands; for example, a larger bandgap leads to smaller NLO coefficients. Here, the successful growth of single crystals of γ -NaAsSe2 that exhibit a giant second harmonic generation (SHG) susceptibility of d11 = 590 pm V−1 at 2 µm wavelength is reported; this is ~18 times larger than that of commercial AgGaSe2 while retaining a similar bandgap of ~1.87 eV, making it an outstanding candidate for quasi-phase-matched devices utilizing d11. In addition, γ -NaAsSe2 is both Type I and Type II phase-matchable, and has a transparency range up to 16 µm wavelength. Thus, γ -NaAsSe2 is a promising bulk NLO crystal for infrared laser applications.
AB - Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down-conversion. Such crystals need to have high non-resonant NLO coefficients, a large bandgap, low absorption coefficient, and phase-matchability among other competing demands; for example, a larger bandgap leads to smaller NLO coefficients. Here, the successful growth of single crystals of γ -NaAsSe2 that exhibit a giant second harmonic generation (SHG) susceptibility of d11 = 590 pm V−1 at 2 µm wavelength is reported; this is ~18 times larger than that of commercial AgGaSe2 while retaining a similar bandgap of ~1.87 eV, making it an outstanding candidate for quasi-phase-matched devices utilizing d11. In addition, γ -NaAsSe2 is both Type I and Type II phase-matchable, and has a transparency range up to 16 µm wavelength. Thus, γ -NaAsSe2 is a promising bulk NLO crystal for infrared laser applications.
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U2 - 10.1002/adom.202101729
DO - 10.1002/adom.202101729
M3 - Article
AN - SCOPUS:85118657404
SN - 2195-1071
VL - 10
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 2
M1 - 2101729
ER -