Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

Linze Li, Jason Britson, Jacob R. Jokisaari, Yi Zhang, Carolina Adamo, Alexander Melville, Darrell G. Schlom, Long Qing Chen, Xiaoqing Pan

Research output: Contribution to journalArticlepeer-review

84 Scopus citations


Researchers report the reversible switching of stable nanoscale charged domain walls (CDWs) and corresponding nanodomains induced by an electric field applied across the cross sectional sample of an epitaxial BiFeO3 thin film, using a recently developed in situ TEM coupled with phase-field simulations. A dramatic resistive switching is observed as the length of the CDW surpasses a critical value, leading to the highest resistance changes ever reported in ferroelectric memories, including ferroelectric tunneling junctions and switchable ferroelectric diodes.

Original languageEnglish (US)
Pages (from-to)6574-6580
Number of pages7
JournalAdvanced Materials
Issue number31
StatePublished - Aug 2016

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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