Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

Linze Li; Jason Britson; Jacob R. Jokisaari; Yi Zhang; Carolina Adamo; Alexander Melville; Darrell G. Schlom; Long Qing Chen; Xiaoqing Pan

doi:10.1002/adma.201600160

Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

Linze Li, Jason Britson, Jacob R. Jokisaari, Yi Zhang, Carolina Adamo, Alexander Melville, Darrell G. Schlom, Long Qing Chen, Xiaoqing Pan

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

Researchers report the reversible switching of stable nanoscale charged domain walls (CDWs) and corresponding nanodomains induced by an electric field applied across the cross sectional sample of an epitaxial BiFeO₃ thin film, using a recently developed in situ TEM coupled with phase-field simulations. A dramatic resistive switching is observed as the length of the CDW surpasses a critical value, leading to the highest resistance changes ever reported in ferroelectric memories, including ferroelectric tunneling junctions and switchable ferroelectric diodes.

Original language	English (US)
Pages (from-to)	6574-6580
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	31
DOIs	https://doi.org/10.1002/adma.201600160
State	Published - Aug 2016

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201600160

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abstract = "Researchers report the reversible switching of stable nanoscale charged domain walls (CDWs) and corresponding nanodomains induced by an electric field applied across the cross sectional sample of an epitaxial BiFeO3 thin film, using a recently developed in situ TEM coupled with phase-field simulations. A dramatic resistive switching is observed as the length of the CDW surpasses a critical value, leading to the highest resistance changes ever reported in ferroelectric memories, including ferroelectric tunneling junctions and switchable ferroelectric diodes.",

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AU - Li, Linze

AU - Britson, Jason

AU - Jokisaari, Jacob R.

AU - Zhang, Yi

AU - Adamo, Carolina

AU - Melville, Alexander

AU - Schlom, Darrell G.

AU - Chen, Long Qing

AU - Pan, Xiaoqing

PY - 2016/8

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AB - Researchers report the reversible switching of stable nanoscale charged domain walls (CDWs) and corresponding nanodomains induced by an electric field applied across the cross sectional sample of an epitaxial BiFeO3 thin film, using a recently developed in situ TEM coupled with phase-field simulations. A dramatic resistive switching is observed as the length of the CDW surpasses a critical value, leading to the highest resistance changes ever reported in ferroelectric memories, including ferroelectric tunneling junctions and switchable ferroelectric diodes.

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JO - Advanced Materials

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ER -

Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

Abstract

All Science Journal Classification (ASJC) codes

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